features ? complementary type fmmt 4 93 marking: 593 m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 120 v v ceo collector - emitter voltage - 100 v v ebo emitter - base voltage - 5 v i c collector current - 1 a p c collector power dissipation 250 m w r ja thermal resistance from j u nction to a mbient 500 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown vol tage v (br) cbo i c = - 1 00 a , i e =0 - 120 v collector - emitter breakdown voltage v (br) c e o i c = - 1 0 ma, i b =0 - 100 v emitter - base breakdown voltage v (br)eb o i e = - 10 0 a , i c =0 - 5 v collector cut - off current i cbo v cb = - 100 v, i e =0 - 0.1 a collector cut - off cur rent i c e s v c es = - 100 v, i e =0 - 0.1 a emitter cut - off current i ebo v eb = - 4 v, i c =0 - 0.1 a h fe (1) * v ce = - 5 v, i c = - 1m a 100 h fe (2) * v ce = - 5 v, i c = - 250 ma 100 h fe (3) * v ce = - 5 v, i c = - 0.5 a 100 300 dc current gain h fe (4) * v ce = - 5 v, i c = - 1 a 50 v ce(sat) 1 * i c = - 250 m a, i b = - 25 ma - 0.2 v collector - emitter saturation voltage v c e(sat) 2 * i c = - 500m a, i b = - 50 ma - 0.3 v b ase - emitter saturation voltage v b e(sat) * i c = - 500m a, i b = - 50 ma - 1.1 v b ase - emitter voltage v b e * v ce = - 5 v, i c = - 1m a - 1 v transition frequency f t v ce = - 1 0 v,i c = - 5 0 ma , f=1 00 mhz 50 mhz collector output capacitance c ob v cb = - 10 v, i e =0, f=1 m hz 5 pf * p ulse test: p ulse w idth 3 00 s, d uty c ycle 2.0%. so t C 23 1. base 2. emitter 3. coll ector FMMT593 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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